PART |
Description |
Maker |
MCM72JG64SG66 MCM72JG32 MCM72JG32SG66 |
256KB and 512KB Pipelined BurstRAM Secondary Cache Module for Pentium
|
http:// MOTOROLA[Motorola, Inc]
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MPC2107SG15 MPC2104 MPC2104SG66 MPC2105SG66 MPC210 |
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
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Motorola, Inc MOTOROLA[Motorola Inc]
|
MPC2105BSG66 MPC2105ASG66 MPC2105A MPC2106ASG66 MP |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc MOTOROLA[Motorola Inc]
|
M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
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STMICROELECTRONICS[STMicroelectronics]
|
M29F400B M29F400T 5127 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory From old datasheet system
|
STMicro
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M29W400 M29W400B-100ZA1TR M29W400B-120ZA1TR M29W40 |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory KPT 15C 14#20 1#16 PIN RECP RES 1 K OHM 1% 0805 KPT 2C 2#20 SKT PLUG KPTC 3C 3#20 PIN PLUG CAP .0056UF 250/275VAC ECQ-UL KPSE 10C 10#20 PIN RECP KPTC 3C 3#20 SKT PLUG 4兆位512KB的x856Kb的x16插槽,引导块低压单电源闪 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,引导块低压单电源闪
|
ST Microelectronics 意法半导 STMicroelectronics N.V.
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CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器 4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器 Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器 From old datasheet system 4 Mbit (512Kb x 8) OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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